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In Situ Time-Resolved Reflectivity Measurements of Growth Kinetics During Solid Phase Epitaxy: A Tool To Estimate Interface Non Planarity During Growth

Published online by Cambridge University Press:  26 February 2011

C. Licoppe  and
Y.I. Nissim
C. Licoppe
Affiliation:
C.N.E.T. Laboratoire de Bagneux*- 196 rue de Paris - 92220 Bagneux - FRANCE
Y.I. Nissim
Affiliation:
C.N.E.T. Laboratoire de Bagneux*- 196 rue de Paris - 92220 Bagneux - FRANCE
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Abstract

The time resolved reflectivity technique is shown to give informations on the amorphous-crystalline interface evolution during solid phase epitaxial (SPE) regrowth in semiconductors. Two specific cases have been treated here. The first case is encountered in laser annealing when the growth front exhibits a curvature due to the combination of an inhomogeneous temperature distribution and a steep dependence of SPE growth rates with temperature. A computer simulation is carried out from an analytical determination of the laser induced temperature profiles to shape up the resultinq reflectivity signal. The second case is obtained when there is an evolution of interface roughness during regrowth. In order to simulate this effect a simple model is developed to treat the influence of diffusion of the reflected light at the interface, on the reflectivity modulation during SPE regrowth.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 51: Symposium A – Beam-Solid Interactions and Phase Transformations , 1985 , 167
Copyright
Copyright © Materials Research Society 1985

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References

REFERENCES

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