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Influence of Low Temperature-Grown GaAs on Lateral Thermal Oxidation of Al0.98Ga0.02As

Published online by Cambridge University Press:  10 February 2011

J. C. Ferrer ,
Z. Liliental-Weber ,
H. Reese ,
Y.J. Chiu  and
E. Hu
J. C. Ferrer
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA
Z. Liliental-Weber
Affiliation:
Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, CA
H. Reese
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA
Y.J. Chiu
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA
E. Hu
Affiliation:
Department of Electrical and Computer Engineering, University of California, Santa Barbara, CA
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Abstract

The lateral thermal oxidation process of Al0.98Ga0.02As layers has been studied by transmission electron microscopy. Growing a low-temperature GaAs layer below the Al0.98Ga0.02As has been shown to result in better quality of the oxide/GaAs interfaces compared to reference samples. While the later have As precipitation above and below the oxide layer and roughness and voids at the oxide/GaAs interface, the structures with low-temperature have less As precipitation and develop interfaces without voids. These results are explained in terms of the diffusion of the As toward the low temperature layer. The effect of the addition of a Si02 cap layer is also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 623: Symposium U – Materials Science of Novel Oxide-Based Electronics , 2000 , 407
Copyright
Copyright © Materials Research Society 2000

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References

1 Sugg, A. R., Holonyak, N. Jr, Baker, J. E., Kish, F. A., and Dallesasse, J. M., Appl. Phys. Lett. 58, p. 1199 (1991).Google Scholar
2 Guha, S., Agahi, F., Pezeshki, B., Kash, J.A., Kisker, D. W. and Bojarczuk, N. A., Appl. Phys. Lett. 68, p. 906 (1996).Google Scholar
3 Liliental-Weber, Z., Ruvimov, S., Swider, W., Washburn, J., Li, M., Li, G. S., Chang-Hasnain, C. and Weber, E. R., SPIE proceeding series 3006, p. 15 (1997).Google Scholar
4 Reese, H., Chiu, Y. J. and Hu, E., Appl. Phys. Lett. 73, p. 2624 (1998).Google Scholar
5 Kaminska, M., Weber, E. R., Liliental-Weber, Z., Leon, R. and Rek, Z., J. Vac. Sci. Technol. B 7, p. 710 (1989).Google Scholar
6 Liliental-Weber, Z., Lin, X. W. and Washburn, J., Appl. Phys. Lett. 66, p. 2086 (1995).Google Scholar
7 Ashby, C. I. H., Bridges, M. M., Allerman, A. A., Hammons, B. E., Appl. Phys. Lett. 75, p. 73 (1999).Google Scholar