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Influence of Oxidation On Boron Sgregation to Grain Boundaries of In-Situ Fractured Ni3Al Alloys

Published online by Cambridge University Press:  21 March 2011

S. A. Koch
Affiliation:
Department of Applied Physics, Materials Science Center and Netherlands Institute for Metals Research, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
D. T. L van Agterveld
Affiliation:
Department of Applied Physics, Materials Science Center and Netherlands Institute for Metals Research, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
G. Palasantzas
Affiliation:
Department of Applied Physics, Materials Science Center and Netherlands Institute for Metals Research, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
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Abstract

Scanning electron and scanning Auger microscopy studies were performed on in-situ fractured B-doped hypostoichiometric Ni3Al alloys. The Auger measurements on the fracture surface showed a very small amount or the total absence of B. Further, B segregated to the grain boundaries during subsequent exposure to the ambient system ultra-high vacuum environment at room temperature. The B segregation appeared to be driven by a mechanism of electronic nature related to Ni enrichment and O supplied from the environment. Ni-oxidation at room temperature is in accordance with model predictions for small beam sizes (≤10 µm) based on the premise that the electron beam creates additional nucleation sites around of which oxide growth occurs. With increasing the size of the e-beam the oxidation process becomes slower and chemisorption of oxygen plays a significant role. As a result the Ni-oxide depth decreases drastically with increasing spot size and offers an alternative route for monitoring the thickness of NiO in a nanometer range.

Type
Research Article
Copyright
Copyright © Materials Research Society 2001

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