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Infrared Study of Trimethylgallium Adsorption on GaAs(100)

Published online by Cambridge University Press:  22 February 2011

Paul E. Gee ,
Haihua Qi  and
Robert F. Hicks
Paul E. Gee
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90024
Haihua Qi
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90024
Robert F. Hicks
Affiliation:
Chemical Engineering Department, 5531 Boelter Hall, University of California, Los Angeles, CA 90024
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Abstract

Trimethylgallium (TMGa) adsorption on GaAs(100) has been studied by infrared spectroscopy. The adsorbed TMGa exhibits up to five C-H stretching vibrations between 2700 and 3000 cm−1 and five C-H deformations between 1100 and 1500 cm−1. The adsorbate uptake is a maximum at arsenic coverages of –65%. These and other results indicate that TMGa dissociatively adsorbs onto As dimers with methyl transfer to second-layer Ga atoms and to As atoms. Above 333 K, molecular desorption competes with adsorption, causing the saturation coverage to fall with increasing temperature. The desorption kinetics depend on the composition of the GaAs(100) surface. These kinetics suggest that above 773 K, TMGa is more likely to decompose on the c(2×8) than on a more Ga-rich surface.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 340: Symposium E – Compound Semiconductor Epitaxy , 1994 , 105
Copyright
Copyright © Materials Research Society 1994

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References

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