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Initial Formation of SiGe/Si Epitaxial Structures And Oxides Produced By Wet Oxidation Of Amorphous SixGe1−x Layers.

Published online by Cambridge University Press:  25 February 2011

S. M. Prokes  and
A. K. Rai
S. M. Prokes
Affiliation:
Naval Research Laboratory, Washington, DC 20375
A. K. Rai
Affiliation:
Universal Energy Systems, Dayton, OH 45432
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Abstract

Epitaxial SiGe/Si heterostructures have been formed by wet oxidation from amorphous SixGe1−x, films deposited on Si(100). This process does not occur by solid phase epitaxy(SPE) due to the presence of a contamination layer between the film and the substrate. The model which has been suggested involves both the diffusion of Si to the forming oxide and enhanced Ge diffusion below this contamination layer. The oxide which is formed in this process consists of four separate layers, with the middle two containing both SiO2 and GeO2. In addition, initial epitaxial formation appears to occur in random regions, probably where the diffusing Si breaks through the contamination layer. Epitaxial submicron “donut” regions on Si(100) can also be formed by this method, and the mechanism will be discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 639
Copyright
Copyright © Materials Research Society 1991

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References

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