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In-Situ Tem Observation of Interfacial Reactions in the Zr/Si System

Published online by Cambridge University Press:  25 February 2011

Htroyuki Tanaka ,
Toyohiko J. Konno  and
Robert Sinclair
Htroyuki Tanaka
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
Robert Sinclair
Affiliation:
Department of Materials Science and Engineering, Stanford University, Stanford, CA 94305-2205
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Abstract

The interfacial reactions in the Zr/Si system were studied by in-situ cross-section TEM including high resolution mode. The reactions consisted of formation of an amorphous interlayer followed by the nucleation and growth of crystalline ZrSi2- The development of the amorphous layer was found to involve two different stages. The ZrSi2 was also found to grow layer-by-layer into the Si via a ledge mechanism.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 337: Symposium B – Advanced Metallization for Devices and Circuits—Science, Technology and Manufacturing III , 1994 , 481
Copyright
Copyright © Materials Research Society 1995

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References

REFERENCES

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