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Integrated Thin Film Capacitor Arrays Utilizing Sol-Gel Derived Ferroelectrics

Published online by Cambridge University Press:  10 February 2011

David Liu ,
Steve Makl  and
Robert H. Heistand II
David Liu
Affiliation:
Advanced Product Technology Center, AVX Corporation, 2200 AVX Drive, B.O. Box 867, Myrtle Beach, SC 29578
Steve Makl
Affiliation:
Advanced Product Technology Center, AVX Corporation, 2200 AVX Drive, B.O. Box 867, Myrtle Beach, SC 29578
Robert H. Heistand II
Affiliation:
Advanced Product Technology Center, AVX Corporation, 2200 AVX Drive, B.O. Box 867, Myrtle Beach, SC 29578
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Abstract

Niobium-doped lead zircomate titanate (PNZT) thin film dielectric material has been produced on a large scale using a thick-coating sol-gel process. The material has been applied to the fabrication of commercial integrated capacitor array devices. Compared to conventional processes, this low-cost, long-shelf-life procedure had at least a 4-fold processing time enhancement. The specific capacitance of 2500 nF/cm2 and integrated density of over 200 component/cm2 have been demonstrated. The frequency domain capacitance measurement of integrated PNZT capacitors exhibits a frequency-independent behavior up to 2 GHz when a DC bias is applied. Leakage-voltage dependence follows the space-charge-limited-current (SCLC) mechanism. The fabricated integrated capacitor arrays pass the industrial standard of reliability for discrete multilayer capacitors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 596: Symposium Y – Ferroelectric Thin Films VIII , 1999 , 451
Copyright
Copyright © Materials Research Society 2000

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