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Interdiffusion of Amorphous Si/Ge Multilayers Under HydrostaticPressure

Published online by Cambridge University Press:  15 February 2011

Steven D. Theiss ,
S. Mitha ,
F. Spaepen  and
M. J. Aziz
Steven D. Theiss
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
S. Mitha
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
F. Spaepen
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
M. J. Aziz
Affiliation:
Division of Applied Sciences, Harvard University, Cambridge, MA 02138
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Abstract

We report initial results of an x-ray diffraction study of thepressure-dependence of the interdiffusion rate in amorphous Si/GeMultilayers. Anneals were performed in a diamond anvil cell at 700 K forvarious pressures and durations. Interdiffusion was measured by Monitoringthe rate of decay of the artificial Bragg peaks associated with themultilayer periodicity. A consistent increase in diffusivity was seen withpressure, characterized by an activation volume of -25±11 percent of theatomic volume of Si. An atomistic mechanism that Might account for suchbehavior is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 59
Copyright
Copyright © Materials Research Society 1994

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References

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