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Interface Roughness, Composition, and Alloying of Low-Order ALAS/GAAS Superlattices Studied by X-Ray Diffraction

Published online by Cambridge University Press:  25 February 2011

W. R. Miller Jr ,
Joseph G. Pellegrino  and
James Comas
W. R. Miller Jr
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
Joseph G. Pellegrino
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
James Comas
Affiliation:
National Institute of Standards and Technology, Gaithersburg, MD 20899
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Abstract

Low-order, monolayer by monolayer (1×1) AlAs/GaAs superlattices grown by MBE using different growth techniques have been studied by X-ray diffractometry. High-resolution multiple-crystal diffractometry was used to study diffraction features near the [004] peaks due to the substrate and epilayers. Using this technique, we have investigated the effect of growth techniques on the strain and tilt of the superlattices. High-resolution X-ray diffraction (HRXRD) results suggest that the sample grown by migration-enhanced epitaxy (MEE) is more highly strained and has more tilt than the same superlattice sample grown using the interrupted growth (IG) technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 280: Symposium B – Evolution of Surface and Thin Film Microstructure , 1992 , 265
Copyright
Copyright © Materials Research Society 1993

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References

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