Hostname: page-component-745bb68f8f-hvd4g Total loading time: 0 Render date: 2025-01-29T23:56:07.745Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of Misfit Dislocation Configurations in Mbe-Grown InGaAs Layers on Misaligned GaAs (001) Substrates

Published online by Cambridge University Press:  28 February 2011

P. Werner ,
N. D. Zakharov ,
Y. Chen ,
Z. Liliental-Weber ,
J. Washburn ,
J. F. Klem  and
J. Y. Tsao
P. Werner
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
N. D. Zakharov
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
Y. Chen
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
Z. Liliental-Weber
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
J. Washburn
Affiliation:
Lawrence Berkeley Laboratory, Berkeley, CA
J. F. Klem
Affiliation:
Sandia National Laboratories, Albuquerque, NM
J. Y. Tsao
Affiliation:
Sandia National Laboratories, Albuquerque, NM
Get access

Abstract

The configurations of misfit dislocations in In0.2Ga0.8As/GaAs(001) hetero structures grown on slightly misoriented substrates was investigated by transmission electron microscopy (TEM). Layers 6 nm, 20 nm and 40 nm thick were grown by MBE. The substrate was tilted in [110], [110], [120], [210] and [010] directions at angles between 0° and 10°. Only in the 40 nm thick layers networks of 60° and 90° dislocations were formed. Misfit dislocations were found at the interface in <110> directions. In the substrate tilting range between 0° and 4° the changes in dislocation density can be explained by the different

character of α and β dislocations. For a substrate tilting above 6° the different dislocation sets show an increased anisotropy. The misfit dislocations at the interface were decorated by In atoms. The influence of three-dimensional crystal growth on increasing surface roughness is discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 811
Copyright
Copyright © Materials Research Society 1993

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Lentzen, M., Gerthsen, D., Förster, A. and Urban, K., Appl. Phys. Lett. 60, 74 (1992).Google Scholar
2. Bonar, J.M., Hull, R., Walker, J.F. and Malik, R., Appl. Phys. Lett. 60, 1327 Google Scholar
3. Morris, D., Sun, Q., Lacelle, C., Roth, A.P., Brebner, J.L., Simard-Normandi, M. and Rajan, K., J. Appl. Phys. 71, 2321 (1992)Google Scholar
4. Abrahams, M.S., Blanc, J. and Buiocchi, C.J., Appl. Phys. Lett. 21, 185 (1972).Google Scholar
5. Erofeeva, S.A., Osipyan, Yu. A., Sov. Phys. Solid State 15, 538 (1973).Google Scholar
6. Sumino, K., Proc. MRS Spring Meeting 1992, Vol. 262.Google Scholar
7. Zakharow, N.D., Chen, Y., Werner, P., Liliental-Weber, Z., Washburn, J., J. Mater. Res., to be publishedGoogle Scholar