Hostname: page-component-6bf8c574d5-956mj Total loading time: 0 Render date: 2025-02-22T20:46:00.968Z Has data issue: false hasContentIssue false
  • English
  • Français

Investigation of the Electronic Transport in Pin Solar Cells Based on Microcrystalline Silicon by 2D Numerical Modeling

Published online by Cambridge University Press:  10 February 2011

J. Zimmer ,
H. Stiebig  and
H. Wagner
J. Zimmer
Affiliation:
Forschungszentrum Juelich GmbH, ISI-PV, D-52425 Juelich, Germany
H. Stiebig
Affiliation:
Forschungszentrum Juelich GmbH, ISI-PV, D-52425 Juelich, Germany
H. Wagner
Affiliation:
Forschungszentrum Juelich GmbH, ISI-PV, D-52425 Juelich, Germany
Get access

Abstract

We investigated the transport and recombination behavior of pin solar cells based on micro- crystalline silicon (μc-Si:H). A comparison of experimental and simulated data of the dark I/V- curves, the I/V-behavior under AM1.5 illumination as well as the quantum efficiency reveals an enhanced defect density in μc-Si:H compared to c-Si which could be located as defect rich grain boundaries around the crystallites. Further, in case there is amorphous phase in the material, the distribution of a-Si:H around the crystallites is unlikely, since the electronic transport properties are disturbed, whereas an arrangement in the shape of extended areas does not affect the transport behavior significantly due to occurrence of percolation.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 507: Symposium A – Amorphous & Microcrystalline Silicon Technology 1998 , 1998 , 377
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1 Carius, R., Finger, F., Backhausen, U., Luysberg, M., Hapke, P., Houben, L., Otte, M., and Overhof, H., Mat. Res. Soc. Symp. Proc., 467, 283 (1997)Google Scholar
2 Lysberg, M., Hapke, P., Carius, R., and Finger, F., Phil. Mag. A 75, 31 (1997)Google Scholar
3 Veprek, S., Sarott, F.-A., and Iqbal, Z., Phys. Rev. B, 36, 3344 (1987)Google Scholar
4 Stiebig, H., Kreisel, A., Nicque, J.-L., Eickhoff, Th., Wagner, H., Proc. 12th E.C. Photovoltaic Solar Energy Conference, 164 (1994)Google Scholar
5 Evangelisti, F., J. Non-Cryst. Solids 77&78, 969 (1985)Google Scholar
6 Matsuura, H. and Okushi, H., in Amorphous & Microcrystalline Semiconductor Devices. Vol. II, ed. by Kanicki, J., Artech House (1992), p. 517 Google Scholar
7 Xu, X., Bannerjee, A., Yang, J., and Guha, S., Mat. Res. Soc. Symp. Proc, 377, 651 (1995)Google Scholar
8 Sze, S.M., ‘Physics of Semiconductor Devices’, John Wiley & Sons, New York, 1981 Google Scholar
9 Eickhoff, Th., Stiebig, H., Reetz, W., Rech, B., Wagner, H., Proc. 13th E.C. Photovoltaic Solar Energy Conference, 238 (1995)Google Scholar
10 Flückinger, R., Meier, J., Keppner, H., Götz, M. and Shah, A., 23rd IEEE Photovoltaic Specialist Conference, 839 (1993)Google Scholar
11 Siebke, F., Yata, S., Hishikawa, Y., and Tanaka, M., this conferenceGoogle Scholar