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Investigation of Time of Flight Photocurrents in a-Si:H

Published online by Cambridge University Press:  26 February 2011

R. P. Barclay ,
G. Seynhaeve ,
G. J. Adriaenssens  and
J. M. Marshall
R. P. Barclay
Affiliation:
Department of Materials Engineering, University College, Swansea SA2 8PP, U.K.
G. Seynhaeve
Affiliation:
Laboratorium voor Vaste Stof en Hoge-Drukfysika, K.U. Leuven, Belgium
G. J. Adriaenssens
Affiliation:
Laboratorium voor Vaste Stof en Hoge-Drukfysika, K.U. Leuven, Belgium
J. M. Marshall
Affiliation:
Department of Materials Engineering, University College, Swansea SA2 8PP, U.K.
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Abstract

Transient photoconductivity can provide extensive information concerning the characteristics and energy distribution (g(E) ) of trapping centres in disordered solids. In this paper, we use both pre-transit (extraction free) and post-transit current decays, from the TOF experiment, to probe g(E) in a-Si:H of intentionally reduced quality.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 118: Symposium E – Amorphous Silicon Technology , 1988 , 519
Copyright
Copyright © Materials Research Society 1988

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References

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