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Investigations of Low-Temperature Epitaxy, Ion Damage, and Reactive-Ion Cleaning Utilizing Ion Beam Deposition

Published online by Cambridge University Press:  28 February 2011

B. R. Appleton ,
R. A. Zuhr ,
T. S. Noggle ,
N. Herbots  and
S. J. Pennycook
B. R. Appleton
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
R. A. Zuhr
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
T. S. Noggle
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
N. Herbots
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
S. J. Pennycook
Affiliation:
Solid State Division, Oak Ridge National Laboratory, P.O. Box X, Oak Ridge, Tennessee 37831
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Abstract

The technique of ion beam deposition (IBD) is utilized to investigate low-energy, ion-induced damage on Si and Ge; to study reactive ion cleaning of Si and Ge; to fabricate amorphous isotopic heterostructures; and to fabricate and study the low-temperature epitaxial deposition of 74Ge on Ge(100), 30Si on Si(100), and 74Ge on Si(100). The techniques of ion scattering/channeling and cross-sectional TEM are combined to characterize the deposits.

Type
Articles
Information
MRS Online Proceedings Library (OPL) , Volume 74: Symposium A – Beam-Solid Interactions and Transient Processes , 1986 , 45
Copyright
Copyright © Materials Research Society 1987

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