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Ion Beam Deposition of Epitaxial Silicon Films

Published online by Cambridge University Press:  10 February 2011

H. R. Khan  and
H. Frey
H. R. Khan
Affiliation:
FEM, Material Physics, Katharinenstraße 17, 73525 Schwaebisch Gmuend, Germany, khanmail@compuserve. com
H. Frey
Affiliation:
Loet- und Schweißgeraete GmbH, 73773 Aichwald, Germany
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Abstract

Silicon films of thicknesses (100 – 800 nm) are deposited on Si[111] substrate at 490°C using Si+ ions of energies (20 – 70 eV) from Silane plasma. The structure of the films depends on the energy of Si+ ions and the film grows epitaxially for ion energy <20 eV. Si films are analyzed by X-ray diffraction technique.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 485: Symposium G – Thin Film Structures for Photovoltaics , 1997 , 13
Copyright
Copyright © Materials Research Society 1998

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