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Ion Implanted Er and Tb in SiO2 for Electroluminescence in MOS Diodes

Published online by Cambridge University Press:  17 March 2011

Ch. Buchal ,
S. Coffa ,
S. Wang  and
R. Carius
Ch. Buchal
Affiliation:
Institut für Schicht- und Iontechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
S. Coffa
Affiliation:
CNR-IMETEM, Strada le Primosole 50, 95121Catania, Italy
S. Wang
Affiliation:
Institut für Schicht- und Iontechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
R. Carius
Affiliation:
Institut für Schicht- und Iontechnik (ISI-IT), Forschungszentrum Jülich GmbH, D-52425 Jülich, Germany
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Abstract

Efficient infra-red and visible electroluminescence(EL) has been obtained from implanted rare earth ions in the SiO2 of a silicon-metal-oxide-semiconductor (MOS) diode structure at room temperature. The rare earth ions are excited by the direct impact of hot electrons tunneling through the oxide at electric fields larger than 6 MV/cm. The internal quantum efficiencies of Er and Tb implanted MOS diodes are estimated to be 10 % and 3 %, respectively. The hgh quantum efficiency is due to the high impact excitation cross-section of more than 10− 15cm2. These observations on MOS structures are an experimental proof for efficient light generation by hot electron impact.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 647: Symposium O – Ion Beam Synthesis & Processing of Advanced Materials , 2000 , O4.1
Copyright
Copyright © Materials Research Society 2001

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