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Ion-Beam Processing of Ion-Implanted Si

Published online by Cambridge University Press:  25 February 2011

H.B. Dietrich ,
R.J. Corazzi  and
W.F. Tseng
H.B. Dietrich
Affiliation:
Naval Research Laboratory, Washington, DC 20375
R.J. Corazzi
Affiliation:
Naval Research Laboratory, Washington, DC 20375
W.F. Tseng
Affiliation:
Naval Research Laboratory, Washington, DC 20375
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Abstract

Substrates can undergo major temperature excursions during ion implantation if they are not well heat sunk. At power densities on the order of 50 watts per cm−2 radiatively cooled Si will melt in a matter of seconds. Such power densities can be maintained over a few sq. cms with many of the beams produced by even the moderate current machines currently used for doping Si and the III-V's. We have made use of this fact to study pulsed ion-beam annealing of implanted Si. Two types of studies have been carried out. In the first, 5–20 sec proton irradiations were done at power densities of 3–35 watts cm−2 to produce sample temperatures of 500 to 1100°C. 2×1016 cm−2 280 keV B, BF2 , As and P implants were annealed in this manner. Sheet resistances, ρs, versus power density curves were obtained for each ion and compared to psρs vs T data obtained for furnace annealed companion samples. In the second study the 2×1016cm−2 280 keV implants were carried out at progressively higher current densities so that the dopant beam itself raised the sample temperature to 500–1000°C. For each ion (other than B) it was possible to obtain power densities which resulted in self-annealing implants whose sheet resistances were as low as those obtained with the optimal furnace anneal. Details of the experiments, electrical and physical properties of the pulsed ion-beam annealed layers and device applications will be presented in this paper.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 241
Copyright
Copyright © Materials Research Society 1984

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References

1. Ion Implantation, edited by Dearnaley, G., Freeman, J.H., Nelson, R.S., Stephen, J., (North Holland Publishing Co., 1973), p. 421.Google Scholar
2. Merli, P.G. and Zignani, F., Pad. Effects Lett. 57, 59 (1980).Google Scholar
3. Cembali, G.F., Merlie, P.G. and Zignani, F., Appl. Phys. Lett., 38, 808 (1981).Google Scholar
4. Cembali, G., Finetti, M., Merli, P.G. and Zignani, F., Appl. Phys. Lett., 40, 62 (1982).Google Scholar
5. Gabilli, E., Lotti, R., Merli, P.G., Nipoti, R. and Ostoja, P., Appl. Phys. Lett., 41, 967 (1982).Google Scholar