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Ising Model Simulations Of Impurity Trapping in Silicon

Published online by Cambridge University Press:  15 February 2011

George H. Gilmer
George H. Gilmer*
Affiliation:
Bell Laboratories Murray Hill, New Jersey 07974
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Abstract

Laser annealing experiments on silicon have shown that rapid solidification can trap large amounts of certain impurities in the crystal lattice. Concentrations that exceed the equilibrium solubility limits by several orders of magnitude have been obtained. In this paper we discuss the impurity trapping process using Monte Carlo simulation data from the kinetic Ising model. The dependence of the impurity concentration in the crystalon the solidification rate is calculated. The simulation data are compared with recent laser annealing results for bismuth and indium. Excellent agreement between the model and the bismuth experiments is obtained. The larger trapping rate on the (111) relative to the (100) orientation is found to be caused by the slower crystallization kinetics on the (111) face. Similar results are obtained for indium, although the difference in trapping on the (111) and (100) faces is somewhat smaller in the model than in the experiment.

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Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 13 , 1982 , 249
Copyright
Copyright © Materials Research Society 1983

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References

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