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A Kinetic Model for GaN Growth

Published online by Cambridge University Press:  10 February 2011

D. D. Koleske ,
A. E. Wickenden ,
R. L. Henry ,
W. J. Desisto  and
R. J. Gorman
D. D. Koleske
Affiliation:
Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
A. E. Wickenden
Affiliation:
Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
R. L. Henry
Affiliation:
Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
W. J. Desisto
Affiliation:
Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
R. J. Gorman
Affiliation:
Laboratory for Advanced Material Synthesis, Code 6861, Electronic Science and Technology Division, Naval Research Laboratory, Washington, D.C. 20375
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Abstract

A kinetic model is presented to explain GaN growth. The model is based on established values for the N and Ga desorption kinetics and well founded assumptions on the adsorption and decomposition of the N and Ga containing precursors. When grown on similar nucleation layers, it is shown that high quality GaN films are achieved when the V/III ratio is chosen to be slightly larger than the Ga and N desorption rates. The model is verified by comparing the structural, optical, and electrical properties of the GaN to the growth temperature and V/III ratio. The model explains several features of GaN growth including, growth conditions for smooth surface morphology, growth conditions for highly resistive GaN, and a possible explanation for the origin of Ga and N vacancies in GaN. Based on the growth model, ordering of the GaN during growth is achieved via an adsorption/desorption cycle where Ga and N containing species are exchanged between the gas phase boundary layer and the solid surface. Consequences of the model on establishing growth conditions and run-to-run reproducability are also discussed.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 167
Copyright
Copyright © Materials Research Society 1998

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