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Kinetic Study Of Crystallisation In Amorphous Thin Lpcvd SiFilms

Published online by Cambridge University Press:  15 February 2011

B. Pieraggi ,
J. P. Guillemet  and
B. de Mauduit
B. Pieraggi
Affiliation:
LMP, URA 445 du CNRS, ENSCT, 118 route de Narbonne, 31077 Toulouse Cedex, France
J. P. Guillemet
Affiliation:
CEMES-LOE, UPR 8011 du CNRS, BP 4347, 31055 Toulouse Cedex, France
B. de Mauduit
Affiliation:
CEMES-LOE, UPR 8011 du CNRS, BP 4347, 31055 Toulouse Cedex, France
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Abstract

The crystallisation behaviour of LPCVD silicon films has been investigatedby TEM from in situ isothermal annealing of undoped a-Sifilms deposited from disilane (Si2H6) at temperatures450,465 and 480 °C and at gas pressure of 200 MTorr. Nucleation kinetics,grain growth rates and crystallisation kinetics were determined fortemperatures ranging from 600 to 675 °C. Nucleation kinetics have beenexperimentally determined in the early first stages of annealing : they donot show any steady-state rate and are fitted according to a power law.Experimental data for crystallisation kinetics are fitted by an Avrami lawwithout introducing any incubation time.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 321: Symposium E – Crystallization and Related Phenomena in Amorphous Materials—Ceramics, Metals, Polymers, and Semiconductors , 1993 , 283
Copyright
Copyright © Materials Research Society 1994

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References

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