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Kinetics of a-Si:H Crystallization Induced by Gold at Low Temperatures

Published online by Cambridge University Press:  21 February 2011

A.A. Pasa ,
M.B. Schubert ,
C.-D. Abel ,
W. Beyer ,
W. Losch  and
G.H. Bauer
A.A. Pasa
Affiliation:
Inst. f. Phys. Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
M.B. Schubert
Affiliation:
Inst. f. Phys. Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
C.-D. Abel
Affiliation:
Inst. f. Phys. Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
W. Beyer
Affiliation:
Inst. f. Schicht- u. Ionentechnik (ISI-1), Forschungszentrum Jülich, D-5170 Jülich, FRG
W. Losch
Affiliation:
LEMI/COPPE/Uni. Fed. Rio de Janeiro, C.P. 68505, 21945 Rio de Janeiro, RJ, Brazil
G.H. Bauer
Affiliation:
Inst. f. Phys. Elektronik, Universitaet Stuttgart, Pfaffenwaldring 47, D-7000 Stuttgart, FRG
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Abstract

The Au-induced crystallization of a-Si:H has been studied by evaporating Au films of different thicknesses onto intrinsic glow discharge deposited a-Si:H layers. The presence of a sharp peak in the Raman spectra (FWHM≈9 cm-1, ω516 cm-1) of samples with a Au thickness larger than 2 nm, which have been annealed in vacuum at 400K≤T≤600K, indicate that the crystallites have approximately the same size (6nm) regardless of the annealing conditions. An investigation of crystallization versus Au-film thickness revealed, that the total crystallized volume is increasing with Au thickness, and furthermore a saturation of the crystallized volume takes place, most probably due to an exhaustion of the Au reservoir. The increase of crystallization rate with temperature follows an Arrhenius-like dependence with an activation energy of 1.1 eV. Changes in hydrogen content as a consequence of the crystallization have been monitored by H-effusion measurements: Au-coated a-Si:H samples show a strong H2 evolution at temperatures substantially lower than uncoated ones.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 129
Copyright
Copyright © Materials Research Society 1992

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References

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