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Laser Recrystallization and 3D Integration

Published online by Cambridge University Press:  25 February 2011

J.P. Colinge
J.P. Colinge*
Affiliation:
CNET, BP98, 38243Meylan, France
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Abstract

There are various methods for producing device-worthy Silicon-on-Insulator films, most, however, are unsuitable for fabrication of 3D integrated structures. The laser recrystallization technique is currently the only one which has produced single-crystal devices for 3D ICs. Improvements on this technique have been such that defects such as grain boundaries can be localized and even eliminated. High speed CMOS circuits with VLSI features have been realized as well as new devices which take advantage of the 3D arrangement of vertically integrated structures. Although 3D integration is still in the early stages of development, it has already opened up new perspectives for applications such as high speed circuits, dense memories, and sensors.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 35: Symposium A – Energy Beam-Solid Interactions and Transient Thermal Processing/1984 , 1984 , 653
Copyright
Copyright © Materials Research Society 1985

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References

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