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Laser Recrystallization of Mocvd Poly-Gaas on Insulating Substrates

Published online by Cambridge University Press:  28 February 2011

X.M. Bao ,
X.F. Huang ,
P. Han  and
J.M. Yin
X.M. Bao
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
X.F. Huang
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
P. Han
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
J.M. Yin
Affiliation:
Department of Physics, Nanjing University, Nanjing, P.R.China
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Abstract

Poly-GaAs films have been grown on amorphous insulating substrates by MOCVD technique. The films were analyzed using TEM, X-ray diffraction, AES and ESCA measurements. The results show that poly-GaAs films are flat, bright and close in texture and stoichiometric. The grain size is about 200Å. The film contains trace impurities such as Si,O and C. They are evenly distributed in the film. The poly-GaAs films were crystallized by CW Ar+ laser with a increase of grain size from 200Å to 40 µm. Schottky barrier diodes of good I-V characteristics were made on the laser recrystallized GaAs films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 107
Copyright
Copyright © Materials Research Society 1986

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References

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