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Laser-Assisted Etching of Lithium Niobate

Published online by Cambridge University Press:  21 February 2011

Glennis J. Orloff ,
Steven L. Bernasek ,
Gary L. Wolk  and
R. J. Coyle
Glennis J. Orloff
Affiliation:
Princeton University, Department of Chemistry, Princeton, NJ 08544
Steven L. Bernasek
Affiliation:
Princeton University, Department of Chemistry, Princeton, NJ 08544
Gary L. Wolk
Affiliation:
AT&T Engineering Research Center, Princeton, NJ 08540
R. J. Coyle
Affiliation:
AT&T Engineering Research Center, Princeton, NJ 08540
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Abstract

Laser-assisted dry etching of lithium niobate, LiNbO3, as well as other electro-optic materials could be an industrially important process in the fabrication of optical waveguides. In this investigation, an excimer laser (ArF; 193nm) was used to conduct etching reactions using nitrogen trifluoride, NF3. Enhancement of etching was observed by comparing the etch rate for a gas assisted process with that of a purely photoablative process. Chemical analysis of the etched features via Auger electron spectroscopy and correlation of a simple rate equation with the experimental data revealed that lasersurface interactions are responsible for the laser-assisted etching process.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 126: Symposium P – Advanced Surface Processes for Optoelectronics , 1988 , 251
Copyright
Copyright © Materials Research Society 1988

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References

REFERENCES

1. Chapman, R.E., Vacuum, 34, 417 (1984).Google Scholar
2. Zhang, B., Forouhar, S., Huang, S.Y., and Chang, W.S.C., J. Lightwave Tech., 2, 528 (1984).CrossRefGoogle Scholar
3. Eyett, M. and Bauerle, D., Appl. Phys. A., 40, 235 (1986).Google Scholar
4. Ashby, C.I.H. and Brannon, P.J., Appl. Phys. Lett., 49, 475 (1986).Google Scholar
5. Eyett, M. and Bauerle, D., Appl. Phys. Lett., 51 2054 (1987).Google Scholar
6. Woytek, A.J., Lileck, J.T., and Barkanic, J.A., Solid State Tech., 1984, 172 (1984).Google Scholar
7. Golja, B., Barkanic, J.A., and Hoff, A., Microelectronics J., 16, 5 (1985).CrossRefGoogle Scholar
8. Loper, G.L. and Tabat, M.D., App. Phys. Lett., 46, 654 (1985).Google Scholar
9. Hirose, M., Yokoyama, S., and Yamakage, Y., J. Vac. Sci. Tech. B., 3, 1445 (1985).CrossRefGoogle Scholar
10. Yokoyama, S., Yamakage, Y., and Hirose, M., Appl. Phys. Lett., 47, 389 (1985).Google Scholar
11. Osgood, R.M. and Deutsch, T.F., Science, 227, 709 (1985).Google Scholar
12. Chuang, T.J., J. Vac. Sci. Tech., 21, 798 (1982).CrossRefGoogle Scholar
13. Houle, F.A., Appl. Phys. A., 41, 315 (1986).Google Scholar
14. Ashby, C.I.H., Appl. Phys. Lett., 45, 892 (1984).Google Scholar
15. Ehrlich, D.J., Osgood, R.M. Jr., and Deutsch, T.F., Appl. Phys. Lett., 36, 698 (1980).Google Scholar
16. Glass, A.M., Peterson, G.E., and Negran, T.J. in An Introduction to Electrooptic Devices, edited by Kaminow, I.P. (Academic Press, New York, 1974) pp. 324–343.Google Scholar