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Light Emission from Porous Silicon Subjected to Rapid Thermal Oxidation

Published online by Cambridge University Press:  28 February 2011

A. G. Cullis ,
L. T. Canham ,
G. M. Williams ,
P. W. Smith  and
O. D. Dosser
A. G. Cullis
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
L. T. Canham
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
G. M. Williams
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
P. W. Smith
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
O. D. Dosser
Affiliation:
DRA Malvern, St Andrews Road, Malvern, Worcs WR14 3PS, UK
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Abstract

Luminescent oxidised porous Si is produced by rapid thermal annealing of the anodised material in a dry oxygen ambient. Its light-emitting properties are studied by both photoluminescence and cathodoluminescence methods. The structure of the oxidised material is examined by transmission electron microscopy, while its oxygen content is determined by X-ray microanalysis. These investigations show that crystalline Si nanostructures remain in the oxidised porous material and account for its luminescence properties. The work demonstrates that the speculated importance of either Si-based amorphous phases or the interesting material, siloxene, in this regard is unrealistic.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 283: Symposium F – Microcrystalline Semiconductors–Materials Science and Devices , 1992 , 257
Copyright
Copyright © Materials Research Society 1993

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References

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