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Local Electronic Structure Of Defects In Gan From Spatially Resolved Electron Energy-Loss Spectroscopy

Published online by Cambridge University Press:  10 February 2011

M. K. H. Natusch ,
G. A. Botton ,
R. F. Broom ,
P. D. Brown ,
D. M. Tricker  and
C. J. Humphreys
M. K. H. Natusch
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
G. A. Botton
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
R. F. Broom
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
P. D. Brown
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
D. M. Tricker
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
C. J. Humphreys
Affiliation:
Department of Materials Science and Metallurgy, University of Cambridge, Pembroke Street, Cambridge, CB2 3QZ, U.K.
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Abstract

The optical properties and their modification by crystal defects of wurtzite GaN are investigated using spatially resolved electron energy-loss spectroscopy (EELS) in a dedicated ultra-high vacuum field emission gun scanning transmission electron microscope. The calculated density of states of the bulk crystal reproduces well the features of the measured spectra. The profound effect of a prismatic stacking fault on the local electronic structure is shown by the spatial variation of the optical properties derived from low-loss spectra. It is found that a defect state at the fault appears to bind 1.5 electrons per atom.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 763
Copyright
Copyright © Materials Research Society 1998

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References

1. Muller, D. A. and Silcox, J., Ultramicroscopy 59, p. 195 (1995)Google Scholar
2. Pennycook, S. J., Contemp Phys 23, p. 371 (1982)Google Scholar
3. Egerton, R. F., Electron energy-loss spectroscopy in the electron microscope, 2nd ed. (Plenum Press, New York, 1996), pp. 256–264 Google Scholar
4. Xin, Y., Brown, P. D., Humphreys, C. J., Cheng, T. S. and Foxon, C. T., Appl Phys Lett 70, p. 1308 (1997)Google Scholar
5. Hedman, J. and Märtensson, N., Phys Scr 22, p. 176 (1980)Google Scholar
6. Bloom, S., Harbeke, G., Meier, E. and Ortenburger, I. B., Phys Stat Sol B66, p. 161 (1974)Google Scholar
7. Logothetidis, S., Petalas, J., Cardona, M. and Moustakas, T. D., Phys Rev B 50, p. 18017 (1994)Google Scholar