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Local Vibrational Modes of Carbon-Hydrogen Complexes in Proton Irradiated AlGaN

Published online by Cambridge University Press:  21 March 2011

M. O. Manasreh  and
B. D. Weaver
M. O. Manasreh
Affiliation:
Department of Electrical and Computer Engineering, University of New Mexico, Albuquerque, New Mexico 87131
B. D. Weaver
Affiliation:
Naval Research Lab, 4555 Overlook Ave, SW, Washington, DC 20375
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Abstract

Local vibrational modes (LVMs) of carbon-hydrogen (C-H) complexes in proton implanted AlGaN grown on sapphire by metalorganic chemical vapor deposition (MOCVD) were investigated using Fourier transform infrared (FTIR) spectroscopy. The LVMs exhibit five distinctive peaks in the spectral region of 2846∼2963 cm−1, which are due to the symmetric and asymmetric stretching modes of C-Hn (n=1–3). The LVMs intensities in doped AlGaN are increased as irradiation dose is increased in the entire irradiation dose range used without reaching the saturation stage. On the other hand, undoped samples show that LVMs intensity increase then either decreased or saturated as the irradiation dose is increased above 5×1016 cm−2. Proton irradiation causes a drastic increase in the CH3 LVM while electron irradiation causes the opposite effect suggesting strongly that the observed LVMs are truly due to CH complexes.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 692: Symposium H – Progress in Semiconductor Materials for Optoelectronic Applications , 2001 , H9.1.1
Copyright
Copyright © Materials Research Society 2002

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References

[1] Nakamura, S., Mukai, T., and Smoh, M., Appl. Phys. Lett. 64, 1687(1994).Google Scholar
[2] Nakamura, S., Fasol, G., in: “The Blue Laser Diode”, (Springer, New York, 1997).Google Scholar
[3] Shur, M.S. and Khan, M.A., GaN/AlGaN Heterostructure devices: Photodetectors and Field Effect Transistors, MRS Bulletin 22(2), pp. 44–50, Feb. (1997).Google Scholar
[4] Razeghi, M. and Rogalski, A., Semiconductor ultraviolet detectors, J. Appl. Phys. 79(10), 7433 (1996).Google Scholar
[5] Doverspike, K., Wickenden, A.E., Binari, S.C., Gaskill, D.K., Freitas, J. A., Mat. Res. Soc. Symp. Proc. 395 (1996) 897.Google Scholar
[6] Nakamura, S., Iwasa, N., Senoh, M., and Mukai, T., Jpn. J. Appl. Phys., Part 1 31, 1258 (1992).Google Scholar
[7] Neugebauer, J. and Walle, C. G. Van de, Phys. Rev. Lett. 75, 4452 (1995).Google Scholar
[8] Gotz, W., Johnson, N. M., Bour, D. P., McCluskey, M. D., and Haller, E.E., Appl. Phys. Lett. 69, 3725 (1996).Google Scholar
[9] Lambsdorff, M., Kohl, J., Rosenzweig, J., Axmann, A. and Schneider, J., Appl. Phys. Lett. 58, 1881 (1991).Google Scholar
[10] Rao, V. M., Hong, W-P, Caneau, C., Chang, G-K., Papanicolaou, N., and Dietrich, H. B., J. Appl. Phys. 70, 3943 (1991).Google Scholar
[11] “GaN and Related Materials”, edited by Pearton, S. J., Vol 2, Chapter 11, (Gordon and Breach, Amsterdam, 1997).Google Scholar
[12] Hoffmann, L., Lavrov, E. V., Nielsen, B. Bech, Hourahine, B., Jones, R., Öberg, S. and Briddon, P. R., Phys. Rev. B 61 No. 24, 16659 (2000).Google Scholar
[13] Hourahine, B., Jones, R., Öberg, S., Newman, R. C., Briddon, P. R. and Roduner, E., Phys. Rev. B 57 No. 20, 12666 (1998).Google Scholar
[14] Dixon, P., Richardson, D., Jones, R., Latham, C. D., Öberg, S., Torres, V. J. B., and Briddon, P.R., Phys. Stat. Sol. (b) 210, 321 (1998).Google Scholar
[15] Yi, G. C., and Wessels, B. W., Appl. Phys. Lett. 70(3), 357 (1996).Google Scholar
[16] Wieder, H., Cardona, M., and Guarnieri, C. R., Phys. Status Solidi B 92, 99 (1979).Google Scholar
[17] Tawada, Y., Tsuge, K., Kondo, M., Okamoto, H., and Hamakawa, Y., J. Appl. Phys. 53, 5273 (1982).Google Scholar
[18] Dischler, B., Bubenzer, A., and Koidl, P., Solid State Commun. 48, 105 (1983).Google Scholar
[19] Myers, S. M., Wright, A. F., Petersen, G. A., Seager, C. H., Crawford, M. H., Wampler, W. R., and Han, J., J. Appl. Phys. 88, 4676 (2000).Google Scholar
[20] Wright, A. F., Phys. Rev. B 60, 5101 (1999).Google Scholar
[21] Bosin, V. Fiorentini, and Vanderbilt, D., Mater. Res. Soc. Symp. Proc. 395, 503 (1996).Google Scholar
[22] Bonapasta, A., Phys. Rev. B 48, 8771 (1993).Google Scholar
[23] Lee, S. –G. and Chang, K. J., Phys. Rev. B 53, 9784 (1996).Google Scholar
[24] Vechten, J.A. van, Zook, J.D., Horning, R.D., Jpn. J. Appl. Phys., 31 3662, (1992).Google Scholar
[25] Pankove, J. I. Zanzucchi, P.J. and Magee, C.W., Appl. Phys. Lett. 46, 421, (1985).Google Scholar