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Loss Peaks in the AC Conductivity of a-Si:H

Published online by Cambridge University Press:  21 February 2011

L. Schirone ,
Ya. Yu. Guseinov ,
G. De Cesare ,
A. Ferrari  and
F.P. Califano
L. Schirone
Affiliation:
Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana n. 18, 00184 Roma, ITALY
Ya. Yu. Guseinov
Affiliation:
Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana n. 18, 00184 Roma, ITALY
G. De Cesare
Affiliation:
Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana n. 18, 00184 Roma, ITALY
A. Ferrari
Affiliation:
Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana n. 18, 00184 Roma, ITALY
F.P. Califano
Affiliation:
Università di Roma “La Sapienza”, Dipartimento di Ingegneria Elettronica, Via Eudossiana n. 18, 00184 Roma, ITALY
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Abstract

The electrical conductivity of a-Si:H films was investigated in the temperature range 300K - 450K under an alternative electric field whose frequency was in the range 100 Hz - 6×106 Hz. Loss peaks were detected, located at a temperature dependent frequency and superimposed to a nearly linear dependence on frequency. Their amplitude has found to be sensitive to Staebler-Wronski Effect. The observed photodegradation-sensitive loss peaks have been described in terms of a Simple Pair Hopping (SPH) mechanism, involving the electronic states associated to dangling bonds, superimposed to a broadband process described by Correlated Barrier Hopping (CBH) model.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 258: Symposium A – Amorphous Silicon Technology – 1992 , 1992 , 801
Copyright
Copyright © Materials Research Society 1992

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References

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