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Low Dielectric Constant Materials Integration Challenges

Published online by Cambridge University Press:  10 February 2011

Gary W. Ray
Gary W. Ray*
Affiliation:
ULSI Research Laboratory, Hewlett-Packard Company, 3500 Deer Creek Road, Palo Alto, California 94304
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Abstract

Considerable effort has been expended in recent years in the development, evaluation, and integration of new low Kc dielectric materials for IC applications. Many film properties must be measured before a film can be selected for integration into an interconnect process flow. Among them are glass transition temperature, thermal stability, Young's modulus, adhesion, stress, coefficient of thermal expansion, dielectric constant, breakdown voltage, solvent resistance, dry etch characteristics, and gap fill performance. These properties must in turn be considered when developing interconnect process modules and selecting the associated equipment set. The properties of these materials differ from those of the commonly used (PE)CVD silicon dioxides to varying extents, depending upon the nature of their composition and structure. This has often resulted in substantial modifications to the modules that comprise interconnect process flows, sometimes compromising manufacturability. This paper will address some of the issues associated with the integration of low K materials into interconnect process flows and how they are related to the properties of these materials.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 511: Symposium E – Low Dielectric Constant Materials IV , 1998 , 199
Copyright
Copyright © Materials Research Society 1998

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