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Low Energy Ion Doping Technology for Poly-Si TFTs

Published online by Cambridge University Press:  10 February 2011

A. Mimura ,
M. Nagai  and
Y. Shinagawa
A. Mimura
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
M. Nagai
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
Y. Shinagawa
Affiliation:
Hitachi Research Laboratory, Hitachi Ltd. 7-1-1 Omika-cho, Hitachi-shi, Ibaraki-ken, 319-12 Japan, amimura@ hrl.hitachi.co.jp
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Abstract

Ion doping technology using a bucket-type ion source to fabricate low temperature poly-Si TFTs is presented. Low energy and high ion density conditions are applied to realize the short doping time and resist mask doping for large area glass substrates. A novel CMOS doping technology with one resist mask process is proposed using compensation and inversion of the shollow doped layer. In combination with excimer laser crystallization and activation below 450°C, high performance CMOS TFTs are produced.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 424: Symposium H – Flat Panel Display Materials II , 1996 , 141
Copyright
Copyright © Materials Research Society 1997

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References

[1] Mimura, A., Mikami, Y., Kuwabara, K., Mori, Y., Nagai, M., Nagae, Y., and Kaneko, E, Proc. of 1994 Int. Display Res. Conf., p.126(1994)Google Scholar
[2] Kuriyama, H., Nohda, T., Aya, Y., Kuwahara, T., Wakisaka, K., Kiyama, S., and Tsuda, S., Jpn. J. Appl. Phys., 33, p.5657(1994)Google Scholar
[3] Kohono, A., Sameshima, T, Sano, N., Sekiya, M., and Hara, M., IEEE Trans. Electron Devices, 42, p.251 (1995)Google Scholar
[4] Chen, S., Sun, Y. H., Mei, P., and Byce, J. B., Proc. The 2nd Int. Display Workshop, p.15(1995)Google Scholar
[5] Hayashi, H., Kunii, M., Suzuki, N., Kanaya, Y., Kuki, M., Minegishi, M., Urazone, T., Fijino, M., Noguchi, T., and Kanagawa, , IEDM 95 Digest, p.829(1995)Google Scholar
[6] Mimura, A., Kawachi, G., Aoyama., T., Suzuki, T., Nagae, Y., Konishi, N., and Mochizuki, Y., IEEE Trans. Electron Devices, 40, p.513(1993)Google Scholar
[7] Kawachi, G., Aoyama, T., Suzuki, T., Mimura, A., Ohno, Y., Konishi, N., Mochizuki, Y., and Miyata, K., Jpn. J. Appl. Phys., p.L2370(1990)Google Scholar
[8] Ohshima, H., Hashizume, T., Matsuo, M., Inoue, S., and Nakazawa, T, Proc. of 1993 SID Int. Symp. p.387(1993)Google Scholar
[9] Mimura, A., Nagai, M., Mimkami, Y., Kuwabara, K., Mori, Y., Nagae, Y., and Kaneka, E., Proc. Int. Symp. Sputtering and Plasma Processes, p.293 (1994)Google Scholar
[10] Mimura, A., Nagai, M., Mikami, Y., Kuwabara, K., Mori, Y., Nagae, Y., and Kaneko, E., Proc. 1995 Int. Display Res. Conf., p.329(1995)Google Scholar