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Low Stress Silicon Nitride and Polysilicon Films for Micromachining Applications

Published online by Cambridge University Press:  21 February 2011

P. A. Beck ,
S. M. Taylor ,
J. P. Mcvittie  and
S. T. Ahn
P. A. Beck
Affiliation:
Applied Physics Department, Stanford University, Stanford CA 94305
S. M. Taylor
Affiliation:
Electrical Engineering Department, Stanford University, Stanford CA 94305
J. P. Mcvittie
Affiliation:
Electrical Engineering Department, Stanford University, Stanford CA 94305
S. T. Ahn
Affiliation:
Materials Science Department, Stanford University, Stanford CA 94305
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Abstract

Reduced stress silicon nitride and undoped, as deposited, polysilicon films have been characterized on a variety of silicon based substrates within the confines of co-fabrication compatibility of micromechanical structures with VLSI processing. Average stress and stress uniformity through the films are shown to vary with substrate parameters.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 182: Symposium C – Polysilicon Thin Films and Interfaces , 1990 , 207
Copyright
Copyright © Materials Research Society 1990

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