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Low Temperature Deposited High Quality ITO Films Prepared by E-Beam Evaporation

Published online by Cambridge University Press:  21 February 2011

C. S. Chang ,
J. C. Wang  and
L. C. Kuo
C. S. Chang
Affiliation:
Materials Research Laboratories Industrial Technology Research Institute Chutung, Hsinchu 31015, Taiwan, R.O.C.
J. C. Wang
Affiliation:
Materials Research Laboratories Industrial Technology Research Institute Chutung, Hsinchu 31015, Taiwan, R.O.C.
L. C. Kuo
Affiliation:
Materials Research Laboratories Industrial Technology Research Institute Chutung, Hsinchu 31015, Taiwan, R.O.C.
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Abstract

An electron beam evaporation method has been used to prepare tin doped indium oxide (ITO) films with 95 wt.% In2O3 and 5 wt.% SnO2 in an oxygen atmosphere. It was found that the deposition rate and oxygen pressure strongly influence the film properties when the substrate temperature was lower than 200°C. In an optimal condition, highly transparent (transmittance ˜ 90% at wavelength 570 nm) and conductive (resistivity – 3×10−4Ω-cm) films of thickness around 2000 Å at substrate temperature as low as 180°C can be obtained.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 187: Symposium J – Thin Film Structures and Phase Stability , 1990 , 147
Copyright
Copyright © Materials Research Society 1990

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