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Low-Temperature, Solution-Based Routes to Nanocrystalline InS Powders and Thin Films

Published online by Cambridge University Press:  10 February 2011

Jennifer A. Hollingsworth  and
William E. Buhro
Jennifer A. Hollingsworth
Affiliation:
Dept. of Chemistry, Washington University, St. Louis, MO 63130
William E. Buhro
Affiliation:
Dept. of Chemistry, Washington University, St. Louis, MO 63130
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Abstract

We have developed several solution-based preparations for nanocrystalline orthorhombic InS, which is a mid band gap semiconductor (2.44 eV) with potential applications in photovoltaics. Various reagents were used as indium (t-Bu3In, t-Bu2InCl) and sulfur (H2S, (TMS)2S) sources. Growth of crystalline powders was dependent upon the addition or in-situ generation of indium metal. These reactions represent the first reported use of a Solution-Liquid-Solid (SLS) mechanism by which semiconductors are grown from a molten metal flux for a system other than the III-V family of semiconductors. The studies on powder preparations were used to develop a new, low-temperature (185 °C) chemical-bath process for depositing a polycrystalline InS thin film. The film was deposited from a solution of t-Bu3In and elemental sulfur onto an indium-coated fused-silica substrate; the indium film acted as the crystallization medium.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 495: Symposium W – Chemical Aspects of Electronic Ceramics Processing , 1997 , 197
Copyright
Copyright © Materials Research Society 1998

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