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Published online by Cambridge University Press: 10 February 2011
Semiconductor multiple-electrode detectors have been developed for the purpose of reducing effects of hole trapping in room-temperature radiation detectors.1,2 Some reported geometries maintain a nearly-uniform electric field inside the detector, but others generate an electric field that is very non-uniform and highly-concentrated at the anode. This paper reports the results of mapping such a detector (having a non-uniform electric field) with a finely collimated gamma-ray beam to determine the detector response as a function of position.