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Measurement of Three Dimensional Polarization Direction in Ferroelectric Thin Films Using Scanning Nonlinear Dielectric Microscopy with Rotating Electric Field

Published online by Cambridge University Press:  11 February 2011

Hiroyuki Odagawa  and
Yasuo Cho
Hiroyuki Odagawa
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai, 980–8577, Japan
Yasuo Cho
Affiliation:
Research Institute of Electrical Communication, Tohoku University, Sendai, 980–8577, Japan
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Abstract

A scanning nonlinear dielectric microscope (SNDM) probe, called theε 311 -type probe, and a system to measure the ferroelectric polarization component parallel to the surface using rotating electric field have been developed. This is achieved by measuring the ferroelectric material's nonlinear dielectric constant ε 311 instead of ε 333, which is measured in conventional SNDM. Experimental result shows that we can successfully determine polarization component parallel to the surface. The SNDM system can measure polarization at any angle from the surface normal which is often of interest.

Information

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 748: Symposium U – Ferroelectric Thin Films XI , 2002 , U10.2
Copyright
Copyright © Materials Research Society 2003

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References

REFERENCES

1. Gruverman, A., Auciello, O., Ramesh, R., and Tokumoto, H., Nanotechnology 8, A38 (1997).Google Scholar
2. Eng, L. M., Gu, H. -J., Schneider, G. A., Kopke, U., and Munoz Saldana, J., Appl. Phys. Lett. 74, 233 (1999).Google Scholar
3. Zavala, G., Fendler, J. H., and Trolier-McKinstr, S., J. Appl. Phys. 81, 7480 (1997).Google Scholar
4. Takashige, M., Hamazaki, S., Takahashi, Y., Shimizu, F., and Yamaguchi, T., Jpn. J. Appl. Phys. 38, 5686 (1999).Google Scholar
5. Kalinin, S. V. and Bonnell, D. A., J. Appl. Phys. 87, 3950 (2000).Google Scholar
6. Gao, C., Duewer, F., Lu, Y., and Xiang, X. D., Appl. Phys. Lett. 73, 1146 (1998)., 1146 (1998).Google Scholar
7. Cho, Y., Kirihara, A., and Saeki, T., Denshi Joho Tsushin Gakkai Ronbunshi 78-c- 1, 593 (1995) [1n Japanese].Google Scholar
8. Cho, Y., Kirihara, A., and Saeki, T., Rev. Sci. Instrum. 67, 2297 (1996).Google Scholar
9. Cho, Y., Kazuta, S., and Matsuura, K., Appl. Phys. Lett. 75, 2833 (1999).Google Scholar
10. Odagawa, H. and Cho, Y., Surf. Sci. 463, L621 (2000).Google Scholar
11. Odagawa, H. and Cho, Y., Jpn. J. Appl. Phys. 39, 5719 (2000).Google Scholar
12. Matsuura, K., Cho, Y. and Odagawa, H., Jpn. J. Appl. Phys. 40, 3534 (2001).Google Scholar