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Mechanism of Laser-Assisted Evaporation of II-VI Semiconductors

Published online by Cambridge University Press:  21 February 2011

J. T. Cheung
J. T. Cheung*
Affiliation:
Rockwell International Science Center1049 Camino Dos RiosThousand Oaks, CA 91360
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Abstract

The evaporation mechanism of CdTe, HgTe and HgO.7CdO.3Te under high power laser irradiation was investigated using mass spectroscopy. Results were compared to thermal evaporation. Thermal evaporation yields Te molecules and Cd(Hg) atoms. In the case of HgTe and Hgo.7Cdo.3Te, the evaporation is noncongruent. Evaporation induced by the irradiation of 1.06 μm Nd:YAG laser pulses evolves atomic Hg, Cd and Te congruently. The dissociative and congruent nature of this process makes it a very attractive technique for depositing thin films.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 29: Symposium I – Laser-Controlled Chemical Processing of Surfaces , 1983 , 301
Copyright
Copyright © Materials Research Society 1984

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References

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