Hostname: page-component-745bb68f8f-f46jp Total loading time: 0 Render date: 2025-01-30T00:04:21.212Z Has data issue: false hasContentIssue false
  • English
  • Français

A Method to Determine the Density of Surface States and Interfacial Charge Density in N-Channel Sos Mosfet's

Published online by Cambridge University Press:  28 February 2011

N.K. Annamalai  and
A.N. Khondker
N.K. Annamalai
Affiliation:
RADC/ESR, Hanscom AFB, MA 01731
A.N. Khondker
Affiliation:
Electrical and Computer Engineering Department, Clarkson University, Potsdam, NY 13676
Get access

Abstract

A method to determine the density of surface states NSS and interfacial charge density QSAP in n-channel silicon-on-sapphire MOS transistors from back channel leakage current measurements is presented. A rigorous theory to determine this current as a function of drain-to-source bias, VDS and as a function of body-to-source bias, VBS is also discussed. The evaluation of leakage current is more rigorous in this work because the surface potential is explicitly calculated from the charge neutrality equation of the device. The surface potential, being dependent on interfacial surface state density and the doping density, is more accurate when evaluated from the charge neutrality equation than from assuming a simple a priori value (ɸs={3/2}ɸF). Applying the present theory to experimentally reported leakage current values, the following were obtained:

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 53 , 1985 , 413
Copyright
Copyright © Materials Research Society 1986

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

[1] Ham, W.E., (Abstract 8.7), IEDM (1973).Google Scholar
[2] McGreivy, D.J., IEEE Trans. Electron Devices, ED 24, (6), 730, (1977).Google Scholar
[3] Harari, E., and McGreivy, D.J., IEEE Trans. Electron Devices ED 24, (11), 1277, (1977).Google Scholar
[4] Gentil, P., Revue De Physique Appliquee, 13, (12), 609, (1978).Google Scholar
[5] Van Overstraeten, R.J., Declerck, G.J., and Muls, P.A., IEEE Trans. Electron Devices ED 22, 282, (1975).Google Scholar