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Microscopic Identification of Anion Antisite Defects in GaAs by Optically Detected Magnetic Resonance

Published online by Cambridge University Press:  28 February 2011

J. Martin Spaeth ,
Detlev M. Hofmann  and
Bruno K. Meyer
J. Martin Spaeth
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
Detlev M. Hofmann
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
Bruno K. Meyer
Affiliation:
University of Paderborn, Fachbereich Physik, Warburger Str. 100 A, D-4790 Paderborn, Federal Republic of Germany
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Abstract

Anion antisite defects in GaAs have been identified so far by their electron spin resonance (ESR) spectrum as one specific point defect, which was found in as-grown, plastically deformed and electron and neutron irradiated GaAs. By optical detection of electron nuclear double resonance (ODENDOR),it could be shown that several species of anion antisite defects exist having practically the same ESR spectrum, which cannot any longer be taken as “fingerprint” identification for this defect. Recent results of ODESR and ODENDOR investigations in as-grown, plastically deformed and electron irradiated GaAs are reviewed. It is also pointed out that the spin lattice relaxation time is an important quantity for the microscopic identification and the properties of anion antisite defects.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 46: Symposium B – Microscopic Identification of Electronic Defects in Semiconductors , 1985 , 185
Copyright
Copyright © Materials Research Society 1985

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