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Microstructures of Si(111) on Ion Sputtering and Electron Annealing

Published online by Cambridge University Press:  25 February 2011

R. Al ,
T. S. Savage ,
P. Xu ,
J. P. Zhang  and
L. D. Marks
R. Al
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
T. S. Savage
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
P. Xu
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
J. P. Zhang
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
L. D. Marks
Affiliation:
Department of Materials Science and Engineering, Northwestern University, Evanston, IL 60208
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Abstract

The microstructure evolution during preparation of thin Si(111) samples for surface sensitive imaging has been studied using ultra-high vacuum (UHV) transmission electron microscopy (TEM). The effects of ion beam sputtering and electron annealing have been investigated. A unique and routine sample preparation method for surface sensitive TEM imaging that combines TEM sample preparations with surface science sample preparation was developed. The microstructure evolution during the sample preparation process was studied in detail.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 236: Symposium B – Photons and Low Energy Particles in Surface Processing , 1991 , 259
Copyright
Copyright © Materials Research Society 1992

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References

1. Schlier, R. E. and Farnsworth, H. E., J. chem. Phys 30, 917 (1959).CrossRefGoogle Scholar
2. Takayanagi, K. Y., Tanishiro, Y., Takahashi, M. and Takahashi, S., J. of Vac. Sci. and Tech. A, 3, 1502 (1985).CrossRefGoogle Scholar
3. Bonevich, J. E. and Marks, L. D, Hitachi Instrument News 17 4 (1989).Google Scholar
4. Coene, W., Dyck, D. Van Tendeloo, G. Van and Ludyt, J. Van, Phil. Mag. A, 52 127 (1985).Google Scholar
5. Poate, J. M. and Mayer, J. W., Laser Annealing of Semiconductors. (Academic Press, New York, 1982).Google Scholar