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Modeling and Simulation of the Influence of SOI Structure on Damage Evolution and Ultra-shallow Junction Formed by Ge Preamorphization Implants and Solid Phase Epitaxial Regrowth

Published online by Cambridge University Press:  01 February 2011

Caroline Mok ,
B. Colombeau ,
M. Jaraiz ,
P. Castrillo ,
J. E. Rubio ,
R. Pinacho ,
M. P. Srinivasan ,
F. Benistant ,
I. Martin-Bragado  and
J. J. Hamilton
Caroline Mok
Affiliation:
g0202446@nus.edu.sg, National University of Singapore, Department of Chemical and Biomolecular Engineering, 4 Engineering Drive 4, Singapore, Singapore, 117576, Singapore
B. Colombeau
Affiliation:
bcolombeau@charteredsemi.com, Chartered Semiconductor Manufacturing, Singapore, Singapore, 738406, Singapore
M. Jaraiz
Affiliation:
mjaraiz@ele.uva.es, University of Valladolid, Valladolid, Valladolid, 47011, Spain
P. Castrillo
Affiliation:
pedcas@tel.uva.es, University of Valladolid, Valladolid, Valladolid, 47011, Spain
J. E. Rubio
Affiliation:
jerg@ele.uva.es, University of Valladolid, Valladolid, Valladolid, 47011, Spain
R. Pinacho
Affiliation:
rutpin@tel.uva.es, University of Valladolid, Valladolid, Valladolid, 47011, Spain
M. P. Srinivasan
Affiliation:
chesmp@nus.edu.sg, National University of Singapore, Singapore, Singapore, 117576, Singapore
F. Benistant
Affiliation:
francisbenistant@charteredsemi.com, Chartered Semiconductor Manufacturing, Singapore, Singapore, 738406, Singapore
I. Martin-Bragado
Affiliation:
nacho@synopsys.com, Synopsys, Mountain View, California, 94043, United States
J. J. Hamilton
Affiliation:
J.Hamilton@surrey.ac.uk, University of Surrey, Guildford, Surrey, GU2 7XH, United Kingdom
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Abstract

Preamorphization implant (PAI) prior to dopant implantation, followed by solid phase epitaxial regrowth (SPER) is of great interest due to its ability to form highly-activated ultra-shallow junctions. Coupled with growing interest in the use of silicon-on-insulator (SOI) wafers, modeling and simulating the influence of SOI structure on damage evolution and ultra-shallow junction formation is required. In this work, we use a kinetic Monte Carlo (kMC) simulator to model the different mechanisms involved in the process of ultra-shallow junction formation, including amorphization, recrystallization, defect interaction and evolution, as well as dopant-defect interaction in both bulk silicon and SOI. Simulation results of dopant concentration profiles and dopant activation are in good agreement with experimental data and can provide important insight for optimizing the process in bulk silicon and SOI.

Keywords

simulationSidefects
Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 912: Symposium C – Doping Engineering for Device Fabrication , 2006 , 0912-C03-04
Copyright
Copyright © Materials Research Society 2006

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