No CrossRef data available.
Article contents
Modeling of Exciplex Recombination in Organic Bilayer Structures
Published online by Cambridge University Press: 03 October 2012
Abstract
The effect of exciplex dynamics on the device characteristics of organic semiconductor bilayer structures is explored. Exciplex formation, dissociation, and relaxation to the ground state are incorporated into a physics-based device model. The model is applied to both organic light emitting diodes and photovoltaic cells. In the examples, C60and tetracene parameters are used for the electron and hole transport layers, respectively.
- Type
- Articles
- Information
- Copyright
- Copyright © Materials Research Society 2012
References
REFERENCES
Gebler, D. D., Wang, Y. Z., Blatchford, J. W., Jessen, S. W., Fu, D. K., Swager, T. M., MacDiarmid, A. G., and Epstein, A. J., Appl. Phys. Lett.
70, 1644 (1997)CrossRefGoogle Scholar
Lai, S. L., Chan, M. Y., Tong, Q. X., Fung, M. K., Wang, P. F., Lee, C. S., and Lee, S. T., Appl. Phys. Lett.
93, 143301 (2008)CrossRefGoogle Scholar
Wang, D., Li, W., Chu, B., Su, Z., Bi, D., Zhang, D., Zhu, J., Yan, F., Chen, Y., and Tsuboi, T., Appl. Phys. Lett.
92, 053304 (2008)CrossRefGoogle Scholar
Müller, J. G., Lupton, J. M., Feldmann, J., Lemmer, U., Scharber, M. C., Sariciftci, N. S., Brabec, C. J., and Scherf, U., Phys. Rev. B, 72, 195208 (2005)CrossRefGoogle Scholar
Pal, S. K., Kesti, T., Maiti, M., Zhang, F., Inganäs, O., Hellström, S., Andersson, M. R., Oswald, F., Langa, F., Österman, T., Pascher, T., Yartsev, A., and Sudström, V., J. Am. Cem. Soc., 132, 12440 (2010)CrossRefGoogle Scholar
Abakumov, V. N., Perel, V. I., and Yassievich, I. N., in Nonradiative Recombination in Semiconductors (North-Holland, Amsterdam, 1991), p.108.Google Scholar
Davids, P. S., Campbell, I. H., and Smith, D. L., J. Appl. Phys.
82, 6319 (1997)CrossRefGoogle Scholar
Crone, B. K., Davids, P. S., Campbell, I. H., and Smith, D. L., J. Appl. Phys.
87, 1974 (2000)CrossRefGoogle Scholar
Liu, F., Ruden, P. P., Campbell, I. H., and Smith, D. L., Appl. Phys. Lett.
99, 123301 (2011)CrossRefGoogle Scholar