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Modulation of Arsenic Incorporation in GaN Layers Grown by Molecular Beam Epitaxy

Published online by Cambridge University Press:  01 February 2011

S. V. Novikov ,
L. X. Zhao ,
C. T. Foxon ,
B. Ja. Ber ,
A. P. Kovarsky ,
I. Harrison ,
M. W. Fay  and
P. D. Brown
S. V. Novikov
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
L. X. Zhao
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
C. T. Foxon
Affiliation:
School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK
B. Ja. Ber
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
A. P. Kovarsky
Affiliation:
Ioffe Physical-Technical Institute, St. Petersburg, 194021, Russia
I. Harrison
Affiliation:
School of Electrical and Electronic Engineering, University of Nottingham, Nottingham, NG7 2 RD, UK
M. W. Fay
Affiliation:
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, Nottingham, NG7 2RD, UK
P. D. Brown
Affiliation:
School of Mechanical, Materials, Manufacturing Engineering and Management, University of Nottingham, Nottingham, NG7 2RD, UK
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Abstract

GaN layers periodically-doped with arsenic were grown by plasma-assisted molecular beam epitaxy on sapphire substrates. Secondary ion mass spectroscopy studies using different secondary ions clearly confirmed the existence of As-modulation in the GaN/GaN:As periodically-doped structures, however, the degree of As-modulation is still under discussion. The use of modulation doping with As has a strong influence on the optical properties of GaN/GaN:As structures.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 798: Symposium Y – GaN and Related Alloys , 2003 , Y8.4
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

[1] Pankove, J.I. and Hutchby, J.A., J. Appl. Phys. 47, 5387 (1976).Google Scholar
[2] Li, X., Kim, S., Reuter, E.E., Bishop, S.G. and Coleman, J.J., Appl. Phys. Lett. 72, 1990 (1998).Google Scholar
[3] Tsatsul'nikov, A.F., Krestnikov, I.L., Lundin, W.V., Sakharov, A.V., Kartashova, A.P., Usikov, A.S., Alferov, Zh. I., Ledentsov, N.N., Strittmatter, A., Hoffmann, A., Bimberg, D., Soshnikov, I.P., Litvinov, D., Rosenauer, A., Gerthsen, D. and Plaut, A., Semicond. Sci. Technol. 15, 766 (2000).Google Scholar
[4] Foxon, C.T., Harrison, I., Novikov, S.V., Winser, A.J., Campion, R.P. and Li, T., J. of Physics: Condensed Matter 14, 3383 (2002).Google Scholar
[5] Van de Walle, C.G. and Neugebauer, J., Appl. Phys. Lett. 76, 1009 (2000).Google Scholar
[6] Andrianov, A.V., Novikov, S.V., Li, T., Xia, R., Bull, S., Harrison, I., Larkins, E.C. and Foxon, C.T., Phys. Stat. Sol. (b) 238, 204 (2003).Google Scholar
[7] Kim, H. and Andersson, T.G., Appl. Phys. Lett. 80, 4768 (2002).Google Scholar
[8] Kim, H., Andersson, T.G., Chauveau, J.M. and Trampert, A., Appl. Phys. Lett. 81, 3407 (2002).Google Scholar