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A Molecular Dynamics Study of Low-Energy Argon and Boron Implants on Silicon (100) Vicinal Surfaces Stepped Surface

Published online by Cambridge University Press:  17 March 2011

A.M. Mazzone  and
C.N.R. Lamel
A.M. Mazzone
Affiliation:
-via Gobetti 101 - Bologna-40129-Italy-mazzone@lamel.bo.cnr.it.
C.N.R. Lamel
Affiliation:
-via Gobetti 101 - Bologna-40129-Italy-mazzone@lamel.bo.cnr.it.
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Abstract

The purpose of this study is to illustrate the effects of the structure of the silicon surface on low-energy implants commonly used in current silicon technology. T o this aim Molecular Dynamics simulations with classical forces are used to study implantation of argon and boron with a kinetic energy in the range from 5eV to 30 eV into a silicon stepped surface. In addition to these calculations, the binding energy of boron atoms embedded in small clusters with a step shape hav e been studied with a quantum mechanical method of a semiempirical type. The purpose of these calculations is to compare the stable sites generated by theimplan ts with the ones attained during thermal treatments under near-equilibrium conditions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 610: Symposium B – Si Front End Processing - Physics & Technology..II , 2000 , B6.1
Copyright
Copyright © Materials Research Society 2000

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References

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