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Monitoring of Silicon Nano-Crystal Dots Formation on SiO2 and on Si3N4 in an UHV-CVD System

Published online by Cambridge University Press:  17 March 2011

Takayuki Kawashima ,
Supika Mashiro ,
Junro Sakai ,
Rajesh Rao ,
R. Muralidhar ,
Bich-Yen Nguyen  and
Bruce White
Takayuki Kawashima
Affiliation:
ANELVA Corporation, 5-8-1 Yotsuya Fuchu Tokyo 183-8508 Japan
Supika Mashiro
Affiliation:
ANELVA Corporation, 5-8-1 Yotsuya Fuchu Tokyo 183-8508 Japan
Junro Sakai
Affiliation:
ANELVA Corporation, 5-8-1 Yotsuya Fuchu Tokyo 183-8508 Japan
Rajesh Rao
Affiliation:
Motorola Material and Structures Laboratories, 3501 Ed Bluesten Blvd Austin, TX
R. Muralidhar
Affiliation:
Motorola Material and Structures Laboratories, 3501 Ed Bluesten Blvd Austin, TX
Bich-Yen Nguyen
Affiliation:
Motorola Material and Structures Laboratories, 3501 Ed Bluesten Blvd Austin, TX
Bruce White
Affiliation:
Motorola Material and Structures Laboratories, 3501 Ed Bluesten Blvd Austin, TX
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Abstract

Applicability of SPA (Surface Photo Absorption) as an in-situ monitor of Si nanocrystal formation was comparatively studied to a monitoring with pyrometer.

Although both SPA and pyrometer provide a signature of the Si nanocrystals nucleation and growth process as a function of irradiation time, SPA was found to be more sensitive to detect formation of desired nanocrystals on both SiO2 and Si3N4 surfaces. By using SPA as an in-situ monitor of nanocrystal formation, good repeatability of both nanocrystals' density and size was obtained on SiO2 and Si3N4 surfaces.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 704: Symposium W – Nanoparticulate Materials , 2001 , W9.11.1
Copyright
Copyright © Materials Research Society 2002

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References

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