Hostname: page-component-745bb68f8f-mzp66 Total loading time: 0 Render date: 2025-01-29T23:57:09.238Z Has data issue: false hasContentIssue false
  • English
  • Français

Multiwafer Movpe of III-Nitride Films for Led and Laser Applications

Published online by Cambridge University Press:  10 February 2011

R. Beccard ,
O. Schoen ,
B. Schineller ,
D. Schmitz ,
M. Heuken  and
H. Juergensen
R. Beccard
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
O. Schoen
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
B. Schineller
Affiliation:
Institut firk Haibleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany + 49-241-80 77 45, + 49-241-88 88 199, mailbox @iht.rwth-aachen.de
D. Schmitz
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
M. Heuken
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com Institut firk Haibleitertechnik, RWTH Aachen, Templergraben 55, D-52056 Aachen, Germany + 49-241-80 77 45, + 49-241-88 88 199, mailbox @iht.rwth-aachen.de
H. Juergensen
Affiliation:
AIXTRON AG, Kackertstr. 15-17, D-52072 Aachen, Germany + 49-241-89 09 0, + 49-241-89 09 40, info@aixtron.com
Get access

Abstract

Process for mass production of GaN and its related alloys, InGaN and AlGaN, have been optimized to achieve high device yield and low cost of ownership. Here we present some of the latest results obtained from AIX 2000 HT Planetary Reactor® in a configuration of 7×2” which provides unique uniformity capabilities due to the two fold rotation of the substrates. GaiN single layers with background electron concentrations below 5·1016 cm-3 and intended doping levels up to 1018 cm-3 p-type and 1020 cm-3 n-type with state of the art homogeneities have been achieved. Thickness homogeneities have been shown to be better than 1% standard deviation on full 2” wafers, while composition uniformity of ternary material is determined by room temperature photoluminescence mappings. Low temperature photoluminescence and reflectance spectra of single layer GaN revealed free exciton transitions.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 482 , 1997 , 155
Copyright
Copyright © Materials Research Society 1998

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

1. Nakamura, S., Fasol, G., The Blue Laser Diode, (Springer-Verlag, Berlin Heidelberg, 1997)Google Scholar
2. Schmitz, D., Beccard, R., Niebuhr, R., Wachtendorf, B., Juergensen, H., Schoen, O., Heuken, M., Uniform Production of High Quality Al-Ga-In-N Heterostructures, MOVPE Growth in Multiwafer Planetary Reactors® and Characterization, (EW MOVPE VII Proc., Berlin, June 1997) F 1210.1557/S1092578300001356Google Scholar
3. Eichel-Streiber, C.v., Schoen, O., Beccard, R., Schmitz, D., Heuken, M., Juergensen, H., MOVPE Growth of High Quality III-Nitride Material for Light Emitting Device Applications in a Mulitwafer System, (ICNS'97 Proc., Tokushima, October 1997) pp. 260–261 Google Scholar
4. Woelk, E., Strauch, G., Schmitz, D., Jirgensen, H., Blue-Green LED Material Based on iII-Nitride MOCVD, (Proceedings of Int'l Symposium on Blue Laser and Ligh Emitting Diodes, Chiba Univ., Japan, 1996) pp. 514–517 Google Scholar
5. Schoen, O., Schineller, B., Heuken, M., Beccard, R., Comparison of Hydrogen and Nitrogen as Carrier Gas for MOVPE Growth of GaN, (Proc. ICNS'97, Tokushima, October 1997) pp. 172–173 Google Scholar
6. Schineller, B., Guttzeit, A., Vertommen, F., Schoen, O., Heuken, M., Heime, K., Beccard, R., Lih Emitting Diodes as a Monitor to Study P-Type Doping of GaN Based Heterostructures Grown by MOVPE, (ICNS'97, Tokushima, October 1997) pp. 506–507 Google Scholar