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Nanosized Metallic Sn Precipitates in Si, Formed Upon Ion Implantation
Published online by Cambridge University Press: 15 February 2011
Abstract
In this work we firstly established the optimal conditions to preferentially form nanosized β-Sn inclusions from a supersaturated solid solution of Sn in Si, formed by a high dose ion implantation. Afterwards we tried to elucidate the origin of the strongly enhanced recoilless fraction of Sn nuclei inside these precipitates, thereby making a link to the observed shift in isomer shift value. This is tentatively interpreted in terms of a local compression of the inclusion to about 200 kbar.
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