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A New Approach to Grow Strain-Free GaAs on Si

Published online by Cambridge University Press:  25 February 2011

Hyunchul Sohn ,
Eicke R. Weber ,
Jay Tu  and
Shyh Wang
Hyunchul Sohn
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA.
Eicke R. Weber
Affiliation:
Department of Materials Science and Mineral Engineering, University of California, Berkeley, CA.
Jay Tu
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA.
Shyh Wang
Affiliation:
Department of Electrical Engineering and Computer Science, University of California, Berkeley, CA.
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Abstract

The major problems of the GaAs/Si heteroepitaxy are the high density of threading dislocations and the high residual strain in the GaAs epilayers. The residual strain in the epilayer is attributed to the difference in contraction during cooling down from the growth temperature. It was reported previously that the residual stress in GaAs epilayer could be reduced by reducing the growth area using substrate patterning. In this paper, we report a new approach to grow strain- free GaAs layer on Si substrates. The residual strain in GaAs/Si is tensile in nature, therefore we attempted to compensate this thermally induced strain by compressive lattice mismatched strain. The thermally induced strain in the GaAs layer was successfully compensated by the lattice- mismatch induced strain using In0.032Ga0.968As. By that method, we could grow thin strain- free GaAs layers on Si without patterning. The strain relieving effect was confirmed by photoluminescence experiment.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 202: Symposium C – Evolution of Thin Film and Surface Microstructure , 1990 , 609
Copyright
Copyright © Materials Research Society 1991

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References

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