Hostname: page-component-6bf8c574d5-gr6zb Total loading time: 0 Render date: 2025-02-22T16:58:10.751Z Has data issue: false hasContentIssue false
  • English
  • Français

A New Hafnium-Beryllium System Prioduced by Ion Implantation and Annealing Techniques

Published online by Cambridge University Press:  25 February 2011

J.C. Soares ,
A.A. Melo ,
M.F. DA Silva ,
E.J. Alves ,
K. Freitag  and
R. Vianden
J.C. Soares
Affiliation:
Centro de Física Nuclear da Universidade de Lisboa, Lisboa, Portugal;
A.A. Melo
Affiliation:
Centro de Física Nuclear da Universidade de Lisboa, Lisboa, Portugal;
M.F. DA Silva
Affiliation:
Laboratório Nacional de Engenharia e Tecnologia Industrial, Sacavém, Portugal;
E.J. Alves
Affiliation:
Laboratório Nacional de Engenharia e Tecnologia Industrial, Sacavém, Portugal;
K. Freitag
Affiliation:
University of Bonn, F.R. Germany.
R. Vianden
Affiliation:
University of Bonn, F.R. Germany.
Get access

Abstract

Low and high dose hafnium imolanted beryllium samoles have been prepared at room temperature by ion implantation of beryllium commercial foils and single crystals. These samples have been studied before and after annealing with the time differential perturbed angular correlation method (TDPAC) and with Rutherford backscattering and channeling techniques. A new metastable system has been discovered in TDPAC-measurements in a low dose hafnium implanted beryllium foil annealed at 500°C. Channeling measurements show that the hafnium atoms after annealing, are in the regular tetrahedral sites but dislocated from the previous position occupied after implantation. The formation of this system is connected with the redistribution of oxygen in a thin layer under the surface. This effect does not take place precisely at the same temperature in foils and in single crystals.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 27: Symposium E – Ion Implantation and Ion Beam Processing of Materials , 1983 , 187
Copyright
Copyright © Materials Research Society 1984

Access options

Get access to the full version of this content by using one of the access options below. (Log in options will check for institutional or personal access. Content may require purchase if you do not have access.)

References

REFERENCES

1. Kaufmann, E. N., Krien, K., Soares, J. C. and Freitag, R., Hyp. Int. 1, 485 (1976).Google Scholar
2. Vianden, R., Kaufmann, E. N. and Rodgers, J.W. Phys. Rev. B22(1980) 63 Google Scholar
3. Krien, K., Soares, J. C., Freitag, K., Tischler, R., Rao, G. N. and Muller, H. G. Phys. Rev. B14, 4782 (1976).Google Scholar
4. Myers, S. M. and Langley, R.A., J. Appl. Phys. 46, 1034 (1975).Google Scholar
5. Myers, S. M., Prevender, S.T., Phys. Rev. B9, 3953 (1974).Google Scholar
6. Soares, J. C., Melo, A. A., Da Silva, M. F., Freitag, D., Herrmann, C., Herzog, P., Rudolph, H.J., Schoesser, K., Vianden, R., Wrede, U. and Boerma, D. O., to be published.Google Scholar