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New Poly-Si TFT'S with Selectively Doped Region in The Channel

Published online by Cambridge University Press:  10 February 2011

Min-Cheol Lee ,
Jae-hong Jeon ,
Juhn-suk Yoo ,
Kee-chan Park ,
Min-koo Han  and
Chan-Eui Yoon
Min-Cheol Lee
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Jae-hong Jeon
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Juhn-suk Yoo
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Kee-chan Park
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Min-koo Han
Affiliation:
School of Electrical Engineering, Seoul National University, Seoul, 151-742, Korea
Chan-Eui Yoon
Affiliation:
KT WCRL Microwave Communication Dept.KOREA
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Abstract

We propose new poly-Si TFT's with selectively doped region in the center of channel in order to reduce large leakage current. In proposed TFT's, the selectively doped region redistributes total induced electric field in the channel. For VGS<0, VDS> 0 in the n-channel proposed TFT's, most of the high electric field applies in the depletion regions which exist the drain/undoped region and undoped region/selectively doped region which faces to the source. Comparing with conventional TFT's, the electric field induced near the drain junction reduces to about 1/2, therefore, electron-hole pairs generated in drain junction are considerably reduced. Furthermore, the ON-current of proposed TFT's is the same or slightly lower than that of conventional ones. Consequently, the experimental data show the considerable improvement of the ON/OFF current ratio.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 558: Symposium B – Flat-Panel Displays and Sensors-Principles, Materials… , 1999 , 351
Copyright
Copyright © Materials Research Society 2000

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References

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