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Ni-Silicided Deep Source/Drain Junctions Formed by Solid Phase Epitaxial Regrowth

Published online by Cambridge University Press:  17 March 2011

Anne Lauwers ,
Richard Lindsay ,
Kirklen Henson ,
Simone Severi ,
Amal Akheyar ,
Bartek J. Pawlak ,
Muriel de Potter  and
Karen Maex
Anne Lauwers
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Richard Lindsay
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Kirklen Henson
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Simone Severi
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Amal Akheyar
Affiliation:
Affiliate researcher at IMEC from Infineon
Bartek J. Pawlak
Affiliation:
Philips Research Leuven
Muriel de Potter
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Karen Maex
Affiliation:
IMEC, Kapeldreef 75, 3001 Leuven, Belgium
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Abstract

Making use of SPER (Solid Phase Epitaxial Regrowth) As and B deep source/drain junctions with high activation can be obtained at temperatures below 700°C. However, higher thermal budget is required to regrow and activate the dopants in the poly gates. Low junction leakage and low contact resistance can be obtained for Ni-silicided As and B SPER junctions making use of deep As and B implants. Because of the low thermal budget source/drain junctions obtained by SPER are an attractive alternative to conventional spike annealed junctions for technologies making use of metal gates.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 810: Symposium C – Silicon Front-End Junction Formation-Physics and Technology , 2004 , C2.2
Copyright
Copyright © Materials Research Society 2004

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References

REFERENCES

1. Chui, C.O., Ramanathan, S., Triplett, B.B., McIntyre, P.C. and Saraswat, K.C., IEEE Electron Dev Lett. 23, 473 (2002).Google Scholar
2. Ashburn, S.P., Ozturk, M.C., Wortman, J.J., Harris, G., Honeycutt, J. and Maher, D.M., J. Electron. Mater. 21, 81 (1992).Google Scholar
3. Li, J., Hong, Q.Z., Mayer, J.W. and Rathbun, L., Appl. Phys. Lett. 67, 2506 (1990).Google Scholar
4. Wittmer, M., Nicolet, M.A. and Mayer, J.W., Thin Solid Films, 42, 51 (1977).Google Scholar
5. Hsieh, Y.F., Chen, L.J., Marshall, E.D. and Lau, S.S., Thin Solid Films, 162, 287 (1988).Google Scholar
6. Patterson, J.K., Park, B.J., Ritley, K., Xiao, H.Z., Allen, L.H. and Rockett, A., Thin Solid Films, 253, 456 (1994).Google Scholar