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Nucleation and Growth of CrSi2 on Si(111)

Published online by Cambridge University Press:  28 February 2011

R.W. Fathauer ,
P.J. Grunthaner ,
T.L. Lin ,
K.T. Chang  and
J.H. Mazur
R.W. Fathauer
Affiliation:
Jet Propulsion Laboratory. California Institute of Technology, Pasadena, CA 91109
P.J. Grunthaner
Affiliation:
Jet Propulsion Laboratory. California Institute of Technology, Pasadena, CA 91109
T.L. Lin
Affiliation:
Jet Propulsion Laboratory. California Institute of Technology, Pasadena, CA 91109
K.T. Chang
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
J.H. Mazur
Affiliation:
Materials Science Department, University of Southern California, Los Angeles, CA 90089-0241
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Abstract

Chromium disilicide layers have been grown on Si(111) in a commercial molecular beam epitaxy machine. Islands are found to nucleate with more than one epitaxial orientation, and three different orientations have been identified: CrSi2(0001)//Si(111) with CrSi2 [1010]//Si[110]. CrSi2(0001)//Si(111) with CrSi2[ll20]//Si[1l0], and CrSi2(1100)//Si(111) with CrSi2[000l]//Si[112]. Very thin (2 nm) layers have been studied under a variety of growth conditions to determine factors controlling the orientation of nuclei. The degree and direction of substrate misorientation, the growth technique, and the use of a CoSi2 buffer layer are all factors affecting the morphology of CrSi2 islands.

Type
Research Article
Information
MRS Online Proceedings Library (OPL) , Volume 116 , 1988 , 453
Copyright
Copyright © Materials Research Society 1988

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